EFFICIENT RED LEDS OF GAP BY VAPOR-PHASE DOPING OF ZINC

被引：8

作者：

KANEKO, K ^{[1
]}

DOSEN, M ^{[1
]}

WATANABE, N ^{[1
]}

机构：

[1] SONY CORP,RES CTR 174,HODOGAYAKU,YOKOHAMA,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1973年 / 12卷 / 11期

关键词：

D O I：

10.1143/JJAP.12.1732

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1732 / 1736

页数：5

共 14 条

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[2] ANOMALOUS ELECTRICAL PROPERTIES OF SOLUTION-GROWN P-TYPE GAP [J].

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[3] SOLID SOLUBILITY ISOTHERMS OF ZN IN GAP AND GAAS [J].

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[4] NEW METHOD OF GROWING GAP CRYSTALS FOR LIGHT-EMITTING DIODES [J].

KANEKO, K ;

AYABE, M ;

DOSEN, M ;

MORIZANE, K ;

USUI, S ;

WATANABE, N .

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[5]

KANEKO K, 1971, Patent No. 1251251

[6]

KANEKO K, 1971, Patent No. 3615203

[7]

KANEKO K, 1972, Patent No. 895251

[8] GALLIUM PHOSPHIDE DOUBLE-EPITAXIAL DIODES [J].

LADANY, I .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) :993-&

[9]

Meyer RJ, 1924, GMELINS HDB ANORGANI

[10] GAP RED ELECTROLUMINESCENT DIODES WITH AN EXTERNAL QUANTUM EFFICIENCY OF 7 PERCENT [J].

SAUL, RH ;

ARMSTRONG, J ;

HACKETT, WH .

APPLIED PHYSICS LETTERS, 1969, 15 (07) :229-+

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