SHARP EXCITONIC PHOTOLUMINESCENCE FROM EPITAXIAL INAS

被引：28

作者：

LACROIX, Y

WATKINS, SP

TRAN, CA

THEWALT, MLW

机构：

[1] Department of Physics, Simon Fraser University, Burnaby

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 09期

关键词：

D O I：

10.1063/1.113825

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optically excited luminescence of epitaxial InAs has been studied at 1.4 K, revealing well-resolved emission lines identified as the exciton-polariton, neutral-acceptor-bound exciton principal and two-hole transitions, donor-acceptor pair band, and phonon assisted transitions. These features are seen in samples of high purity InAs grown by metalorganic chemical vapor deposition on InAs substrates using tertiarybutylarsine and trimethylindium. Only one acceptor species is observed, having a 1 S3/2-2 S3/2 transition energy of 13.39±0.01 meV, and an acceptor-bound exciton binding energy of 2.11±0.03 meV.© 1995 American Institute of Physics.

引用

页码：1101 / 1103

页数：3

共 6 条

[1] DEPENDENCE OF RAMAN FREQUENCIES AND SCATTERING INTENSITIES ON PRESSURE IN GASB, INAS, AND INSB SEMICONDUCTORS [J].