HIGH-FIELD ELECTRON-DRIFT MEASUREMENTS AND THE MOBILITY EDGE IN HYDROGENATED AMORPHOUS-SILICON

被引：24

作者：

GU, Q ^{[1
]}

SCHIFF, EA ^{[1
]}

CHEVRIER, JB ^{[1
]}

EQUER, B ^{[1
]}

机构：

[1] ECOLE POLYTECH,PHYS INTERFACES & COUCHES MINCES LAB,CNRS,UPR 258,F-91128 PALAISEAU,FRANCE

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.52.5695

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report electron photocarrier time-of-flight measurements at high electric fields for two thick hydrogenated amorphous silicon (a-Si:H) p-i-n diodes. At 77 K an exponential increase in the electron mobility of more than 100 is observed as the field is increased to E = 400 kV/cm. The dispersion parameter was field independent. We discuss previous reports of field-dependent dispersion in terms of interface effects. We propose a model for high-field effects based on an electric-field-dependent mobility edge which accounts satisfactorily for the measured electric field and temperature dependence of the electron drift mobility. Effective-temperature models do not account for our measurements since they predict field-dependent dispersion. The microscopic electron mobility mu(o) similar to 3 cm(2)/V s is remarkably independent of electric field, temperature, and germanium alloying.

引用

页码：5695 / 5707

页数：13

共 57 条

[41] HOLE MOBILITIES IN FILMS OF A PYRAZOLINE POLYCARBONATE MOLECULARLY DOPED POLYMER [J].

PELED, A ;

SCHEIN, LB ;

GLATZ, D .

PHYSICAL REVIEW B, 1990, 41 (15) :10835-10844

[42] COMPARISON OF CHARGE TRANSPORT MODELS IN MOLECULARLY DOPED POLYMERS [J].

SCHEIN, LB .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1992, 65 (04) :795-810

[43] TIME-SCALE INVARIANCE IN TRANSPORT AND RELAXATION [J].

SCHER, H ;

SHLESINGER, MF ;

BENDLER, JT .

PHYSICS TODAY, 1991, 44 (01) :26-34

[44] ANOMALOUS TRANSIT-TIME DISPERSION IN AMORPHOUS SOLIDS [J].

SCHER, H ;

MONTROLL, EW .

PHYSICAL REVIEW B, 1975, 12 (06) :2455-2477

[45] PICOSECOND ELECTRON-DRIFT MOBILITY MEASUREMENTS IN HYDROGENATED AMORPHOUS-SILICON [J].

SCHIFF, EA ;

DEVLEN, RI ;

GRAHN, HT ;

TAUC, J ;

GUHA, S .

APPLIED PHYSICS LETTERS, 1989, 54 (19) :1911-1913

[46]

SCHKLOVSKII BI, 1990, TRANSPORT CORRELATIO, P161

[47] DISPERSIVE HOPPING TRANSPORT FROM AN EXPONENTIAL ENERGY-DISTRIBUTION OF SITES [J].

SILVER, M ;

SCHOENHERR, G ;

BAESSLER, H .

PHYSICAL REVIEW LETTERS, 1982, 48 (05) :352-355

[48] EFFECTS OF DOPING ON TRANSPORT AND DEEP TRAPPING IN HYDROGENATED AMORPHOUS-SILICON [J].

STREET, RA ;

ZESCH, J ;

THOMPSON, MJ .

APPLIED PHYSICS LETTERS, 1983, 43 (07) :672-674

[49]

Tiedje T., 1984, Physics of hydrogenated amorphous silicon II. Electronic and vibrational properties, P261

[50] EVIDENCE FOR EXPONENTIAL BAND TAILS IN AMORPHOUS-SILICON HYDRIDE [J].

TIEDJE, T ;

CEBULKA, JM ;

MOREL, DL ;

ABELES, B .

PHYSICAL REVIEW LETTERS, 1981, 46 (21) :1425-1428

← 1 2 3 4 5 6 →