SOME PROPERTIES OF SILICON SI(P) DETECTORS

被引：8

作者：

AVDEICHIKOV, VV

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS | 1978年 / 155卷 / 1-2期

关键词：

D O I：

10.1016/0029-554X(78)90196-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：125 / 134

页数：10

共 23 条

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[3]

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[4]

AVDEICHIKOV VV, 1976, IZV AN SSSR FIZ+, V40, P1266

[5] SEMICONDUCTOR SI(NPN) DETECTOR WITH 2 SURFACE-BARRIER JUNCTION [J].

AVDEICHIKOV, VV .

NUCLEAR INSTRUMENTS & METHODS, 1976, 138 (02) :381-381

[6] SIMPLE SI(P) DETECTOR FOR BETA-RAY AND X-RAY SPECTROSCOPY [J].

AVDEICHIKOV, VV ;

GANZA, EA ;

PRIKHODTSEVA, VP .

NUCLEAR INSTRUMENTS & METHODS, 1976, 133 (03) :579-580

[7]

AVDEICHIKOV VV, 1974, THESIS, P451

[8]

AVDEICHIKOV VV, 24TH S NUCL SPECTR

BAWDEKAR, VS ;

SOS, AJ .

[10]

DEARNALEY G, 1966, SEMICONDUCTOR COUNTE