SEMICONDUCTOR CONTACTS TO SILICON SURFACE-BARRIER DETECTORS

被引:4
作者
ANDERSSO.LP [1 ]
HYDER, A [1 ]
MISRA, M [1 ]
机构
[1] UNIV UPPSALA,INST PHYS,UPPSALA,SWEDEN
来源
NUCLEAR INSTRUMENTS & METHODS | 1974年 / 118卷 / 02期
关键词
D O I
10.1016/0029-554X(74)90663-6
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:537 / 539
页数:3
相关论文
共 21 条
[1]   EFFECT OF DEPOSITION PARAMETERS ON CRYSTALLINITY OF EVAPORATED GERMANIUM FILMS [J].
ADAMSKY, RF .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4301-&
[2]   MINORITY-CARRIER INJECTION AND RESISTANCE MODULATION IN SILICON SURFACE-BARRIER DIODES [J].
ANDERSSON, LP ;
HYDER, A ;
BERG, S .
NUCLEAR INSTRUMENTS & METHODS, 1974, 114 (02) :237-239
[3]   MECHANISM OF ALUMINUM CONTACTS IN SURFACE BARRIER DETECTORS [J].
ANDERSSON, LP ;
BERG, S .
NUCLEAR INSTRUMENTS & METHODS, 1973, 108 (03) :435-437
[4]  
ARCHER RJ, 1963, ANN NY ACAD SCI, V101, P697
[5]  
ATALLA MM, 1966, OCT P INEA MICR C, P123
[6]   VOLTAGE-DEPENDENT REVERSE CURRENT IN HIGH-RESISTIVITY SILICON SURFACE-BARRIER DIODES [J].
BERG, S ;
ANDERSSON, LP .
NUCLEAR INSTRUMENTS & METHODS, 1974, 114 (02) :241-244
[7]   ELECTRICAL AND OPTICAL PROPERTIES OF AMORPHOUS GERMANIUM [J].
CLARK, AH .
PHYSICAL REVIEW, 1967, 154 (03) :750-&
[8]   CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J].
CROWELL, CR ;
SZE, SM .
SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1035-&
[9]   NEW TYPE OF NON-INJECTING BACT CONTACT FOR TOTALLY DEPLETED SILICON SURFACE BARRIER DETECTORS [J].
ENGLAND, JBA ;
HAMMER, VW .
NUCLEAR INSTRUMENTS & METHODS, 1971, 96 (01) :81-&
[10]  
ENGLAND JBA, PRIVATE COMMUNICATIO