VOLTAGE-DEPENDENT REVERSE CURRENT IN HIGH-RESISTIVITY SILICON SURFACE-BARRIER DIODES

被引：3

作者：

BERG, S ^{[1
]}

ANDERSSON, LP ^{[1
]}

机构：

[1] UNIV UPPSALA, INST PHYS, UPPSALA, SWEDEN

来源：

NUCLEAR INSTRUMENTS & METHODS | 1974年 / 114卷 / 02期

关键词：

D O I：

10.1016/0029-554X(74)90539-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：241 / 244

页数：4

共 8 条

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