SEMICONDUCTOR CONTACTS TO SILICON SURFACE-BARRIER DETECTORS

被引：4

作者：

ANDERSSO.LP ^{[1
]}

HYDER, A ^{[1
]}

MISRA, M ^{[1
]}

机构：

[1] UNIV UPPSALA,INST PHYS,UPPSALA,SWEDEN

来源：

NUCLEAR INSTRUMENTS & METHODS | 1974年 / 118卷 / 02期

关键词：

D O I：

10.1016/0029-554X(74)90663-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：537 / 539

页数：3

共 21 条

[11] OPTICAL PROPERTIES OF THIN GERMANIUM FILMS IN WAVELENGTH RANGE 2000-6000 A [J].

GRANT, PM ;

PAUL, W .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) :3110-&

[12] HOPPING CONDUCTION IN AMORPHOUS SOLIDS [J].

HILL, RM .

PHILOSOPHICAL MAGAZINE, 1971, 24 (192) :1307-&

[13] CONDUCTION IN NON-CRYSTALLINE MATERIALS .3. LOCALIZED STATES IN A PSEUDOGAP AND NEAR EXTREMITIES OF CONDUCTION AND VALENCE BANDS [J].

MOTT, NF .

PHILOSOPHICAL MAGAZINE, 1969, 19 (160) :835-&

[14]

PIERCE DT, 1972, J NONCRYST SOLIDS, V8, P959

[15] IMPURITY ELECTRONS IN AMORPHOUS GERMANIUM A PHOTOEMISSION ARGUMENT FOR MOTT MODEL [J].

RIBBING, CG ;

SPICER, WE .

PHYSICS LETTERS A, 1971, A 37 (01) :85-&

[16] PHOTOEMISSION INVESTIGATION OF AMORPHOUS GERMANIUM [J].

RIBBING, CG ;

PIERCE, DT ;

SPICER, WE .

PHYSICAL REVIEW B, 1971, 4 (12) :4417-&

[17] ELECTRONIC STRUCTURE OF AMORPHOUS GE [J].

SPICER, WE ;

DONOVAN, TM .

PHYSICAL REVIEW LETTERS, 1970, 24 (11) :595-&

[18]

TOVE PA, 1970, SEP P IEEE C EL DEV, P67

[19] METAL-SILICON SCHOTTKY BARRIERS [J].

TURNER, MJ ;

RHODERICK, EH .

SOLID-STATE ELECTRONICS, 1968, 11 (03) :291-+

[20] ELECTRICAL CONDUCTION IN AMORPHOUS SILICON AND GERMANIUM [J].

WALLEY, PA .

THIN SOLID FILMS, 1968, 2 (04) :327-&

← 1 2 3 →