EFFECT OF OXYGEN ON RF-SPUTTERING RATE OF SIO2

[1] CHANIN LM, 1962, PHYS REV, V128, P129

[2] DIELECTRIC THIN FILMS THROUGH RF SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) : 574 - &

[3] ELEKTRISCHE LEITFAHIGKEIT UND STRUKTUR AUFGESTAUBTER KADMIUMOXYDSCHICHTEN [J]. ZEITSCHRIFT FUR PHYSIK, 1952, 132 (05): : 621 - 642

[4] RE-EMISSION COEFFICIENTS OF SI AND SIO2 FILMS DEPOSITED THROUGH RF AND DC SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (12) : 4656 - &

[5] STERN EA, PRIVATE COMMUNICATIO

[6] VALLETTA RM, 1966, ELECTROCHEM TECHNOL, V4, P402

[7] SURFACE CLEANING BY CATHODE SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (09) : 1583 - 1584

[1] CHANIN LM, 1962, PHYS REV, V128, P129

[2] DIELECTRIC THIN FILMS THROUGH RF SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) : 574 - &

[3] ELEKTRISCHE LEITFAHIGKEIT UND STRUKTUR AUFGESTAUBTER KADMIUMOXYDSCHICHTEN [J]. ZEITSCHRIFT FUR PHYSIK, 1952, 132 (05): : 621 - 642

[4] RE-EMISSION COEFFICIENTS OF SI AND SIO2 FILMS DEPOSITED THROUGH RF AND DC SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (12) : 4656 - &

[5] STERN EA, PRIVATE COMMUNICATIO

[6] VALLETTA RM, 1966, ELECTROCHEM TECHNOL, V4, P402

[7] SURFACE CLEANING BY CATHODE SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (09) : 1583 - 1584