DEFECT PHOTO-LUMINESCENCE FROM PULSED-LASER-ANNEALED ION-IMPLANTED SI

[1] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 788 - 797

[2] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J]. PHYSICAL REVIEW B, 1970, 1 (06): : 2632 - &

[3] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION [J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 464 - 466

[4] DEVICE FOR LASER-BEAM DIFFUSION AND HOMOGENIZATION [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1979, 12 (08): : 688 - 689

[5] CORRELATION OF THE STRUCTURE AND ELECTRICAL-PROPERTIES OF ION-IMPLANTED AND LASER-ANNEALED SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 547 - 550

[6] NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1967, 161 (03): : 711 - &

[7] STRUCTURE OF CRYSTALLIZED LAYERS BY LASER ANNEALING OF (100) AND (111) SELF-IMPLANTED SILICON SAMPLES [J]. APPLIED PHYSICS, 1978, 15 (04): : 365 - 369

[8] Hensel J.C., 1977, SOLID STATE PHYS, V32, P87

[9] KHAIBULLIN IB, 1977, SOV PHYS SEMICOND+, V11, P190

[10] KIMERLING LC, 1980, LASER ELECTRON BEAM, P385

[1] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 788 - 797

[2] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS [J]. PHYSICAL REVIEW B, 1970, 1 (06): : 2632 - &

[3] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION [J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 464 - 466

[4] DEVICE FOR LASER-BEAM DIFFUSION AND HOMOGENIZATION [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1979, 12 (08): : 688 - 689

[5] CORRELATION OF THE STRUCTURE AND ELECTRICAL-PROPERTIES OF ION-IMPLANTED AND LASER-ANNEALED SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 547 - 550

[6] NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1967, 161 (03): : 711 - &

[7] STRUCTURE OF CRYSTALLIZED LAYERS BY LASER ANNEALING OF (100) AND (111) SELF-IMPLANTED SILICON SAMPLES [J]. APPLIED PHYSICS, 1978, 15 (04): : 365 - 369

[8] Hensel J.C., 1977, SOLID STATE PHYS, V32, P87

[9] KHAIBULLIN IB, 1977, SOV PHYS SEMICOND+, V11, P190

[10] KIMERLING LC, 1980, LASER ELECTRON BEAM, P385