A SIMPLE TECHNIQUE TO MEASURE STRESS IN ULTRATHIN FILMS DURING GROWTH

被引：40

作者：

SANDER, D

ENDERS, A

KIRSCHNER, J

机构：

[1] Max-Planck-Institut für Mikrostrukturphysik, 06120-Halle

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1995年 / 66卷 / 09期

关键词：

D O I：

10.1063/1.1145316

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We demonstrate an easy implementation of the cantilever bending beam approach to measure stress during film growth in ultrahigh vacuum. Using a simple and compact optical deflection technique, film stress with sub-monolayer sensitivity can be detected. A stress measurement during FeSi2 formation on Si(111) is presented. (C) 1995 American Institute of Physics.

引用

页码：4734 / 4735

页数：2

共 8 条

[1]

BRANTLEY WA, 1972, J APPL PHYS, V44, P534

[2] CALCULATION OF STRESS IN ELECTRODEPOSITS FROM THE CURVATURE OF A PLATED STRIP [J].