EXPERIMENTAL-DETERMINATION OF ADSORBATE-INDUCED SURFACE STRESS - OXYGEN ON SI(111) AND SI(100)

被引:100
作者
SANDER, D
IBACH, H
机构
[1] Institut für Grenzflächenforschung und Vakuumphysik, Forschungszentrum Jülich, D-5170 Jülich
来源
PHYSICAL REVIEW B | 1991年 / 43卷 / 05期
关键词
D O I
10.1103/PhysRevB.43.4263
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have determined the surface stress induced by the room-temperature adsorption of oxygen on Si(111) and Si(100) surfaces. As a result of the breaking of the Si-Si bonds and the formation of the Si-O-Si bonds, both surfaces exhibit a measurable stress. Whereas the system O-Si(111) shows a compressive stress of -7200 dyn/cm, the adsorption of oxygen on a Si(100) surface leads to a tensile stress of +260 dyn/cm per monolayer oxygen coverage. The experimental results are in decent agreement with a simple cluster calculation using a valence-bond model.
引用
收藏
页码:4263 / 4267
页数:5
相关论文
共 18 条
[1]   SURFACE-POTENTIAL, CHARGE-DENSITY, AND IONIZATION-POTENTIAL FOR SI(111) - SELF-CONSISTENT CALCULATION [J].
APPELBAUM, JA ;
HAMANN, DR .
PHYSICAL REVIEW LETTERS, 1974, 32 (05) :225-228
[2]   CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES [J].
BRANTLEY, WA .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :534-535
[3]   CALCULATION OF STRESS IN ELECTRODEPOSITS FROM THE CURVATURE OF A PLATED STRIP [J].
BRENNER, A ;
SENDEROFF, S .
JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1949, 42 (02) :105-123
[4]   VIBRATIONAL STUDY OF THE INITIAL-STAGES OF THE OXIDATION OF SI(111) AND SI(100) SURFACES [J].
IBACH, H ;
BRUCHMANN, HD ;
WAGNER, H .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 29 (03) :113-124
[5]   DISSOCIATIVE CHEMISORPTION OF H2O ON SI(100) AND SI(111) - A VIBRATIONAL STUDY [J].
IBACH, H ;
WAGNER, H ;
BRUCHMANN, D .
SOLID STATE COMMUNICATIONS, 1982, 42 (06) :457-459
[6]   RHEED STUDY ON THE GE/SI(111) AND SI/GE(111) SYSTEMS - REACTION OF GE WITH THE SI(111)(7X7) SURFACE [J].
ICHIKAWA, T ;
INO, S .
SURFACE SCIENCE, 1984, 136 (2-3) :267-284
[7]   DIRECT MEASUREMENT OF CRYSTAL-SURFACE STRESS [J].
MARTINEZ, RE ;
AUGUSTYNIAK, WM ;
GOLOVCHENKO, JA .
PHYSICAL REVIEW LETTERS, 1990, 64 (09) :1035-1038
[8]   STRUCTURE OF SI(111)-7X7 .2. [J].
MCRAE, EG .
SURFACE SCIENCE, 1984, 147 (2-3) :663-684
[9]   ORIGINS OF STRESS ON ELEMENTAL AND CHEMISORBED SEMICONDUCTOR SURFACES [J].
MEADE, RD ;
VANDERBILT, D .
PHYSICAL REVIEW LETTERS, 1989, 63 (13) :1404-1407
[10]  
MOSKE M, 1989, REV SCI INSTRUM, V59, P2012