BOMBARDMENT-PRODUCED DEFECTS IN P-TYPE GERMANIUM AT LOW TEMPERATURES

被引:30
作者
FLANAGAN, TM
KLONTZ, EE
机构
来源
PHYSICAL REVIEW | 1968年 / 167卷 / 03期
关键词
D O I
10.1103/PhysRev.167.789
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:789 / &
相关论文
共 23 条
[1]   NEW METHOD FOR TREATING LATTICE POINT DEFECTS IN COVALENT CRYSTALS [J].
BENNEMAN, KH .
PHYSICAL REVIEW, 1965, 137 (5A) :1497-+
[2]  
BOLTAKS BI, 1963, DIFFUSION SEMICONDUC, P188
[3]  
BROWN DM, 1961, THESIS PURDUE U, P38
[4]   ANNEALING OF RADIATION DEFECTS IN SEMICONDUCTORS [J].
BROWN, WL ;
AUGUSTYNIAK, WM ;
WAITE, TR .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1258-1268
[5]   IRRADIATION DAMAGE IN N-TYPE GERMANIUM AT 4.2 DEGREES K [J].
CALLCOTT, TA ;
MACKAY, JW .
PHYSICAL REVIEW, 1967, 161 (03) :698-+
[6]  
CALLCOTT TA, 1963, THESIS PURDUE U
[7]  
DAMASK AC, 1963, POINT DEFECTS METALS, pCH2
[8]  
DIENES GJ, 1957, RADIATION EFFECTS SO, P138
[9]  
FLANAGAN TM, 1966, THESIS PURDUE U
[10]  
HIRAKI A, 1967, J APPL PHYS, V38