MONOLITHIC INTEGRATION OF A DFB LASER AND AN MQW OPTICAL MODULATOR IN THE 1.5 MU-M WAVELENGTH RANGE

被引：45

作者：

KAWAMURA, Y

WAKITA, K

YOSHIKUNI, Y

ITAYA, Y

ASAHI, H

机构：

[1] NTT, Atsugi, Jpn, NTT, Atsugi, Jpn

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1987年 / 23卷 / 06期

关键词：

CRYSTALS - Epitaxial Growth - INTEGRATED OPTICS - LIGHT - Modulators - MOLECULAR BEAM EPITAXY;

D O I：

10.1109/JQE.1987.1073439

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A monolithically integrated device with an improved structure consisting of an InGaAsP/InP distributed feedback (DFB) laser and an In-GaAs/InAlAs multi-quantum-well (MQW) optical modulator was fabricated by the liquid phase epitaxy/molecular beam epitaxy hybrid growth technique. The DFB laser in this device was operated at 1. 556 mu m under CW conditions at room temperature. A narrow coupling region between laser and modulator results in a depth of modulation as high as 55% at a modulator reverse bias voltage of -5 V. High-speed modulation with a response time of 300 ps was achieved in this monolithic device.

引用

页码：915 / 918

页数：4

共 9 条

[1] ETCHED MIRROR AND GROOVE-COUPLED GALNASP/INP LASER DEVICES FOR INTEGRATED-OPTICS [J].