VERTICAL-CAVITY SURFACE-EMITTING LASER-DIODES FABRICATED BY PHASE-LOCKED EPITAXY

被引：44

作者：

WALKER, JD ^{[1
]}

KUCHTA, DM ^{[1
]}

SMITH, JS ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 17期

关键词：

D O I：

10.1063/1.106414

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report 10 mW cw room-temperature operation of an electrically pumped vertical-cavity surface-emitting laser diode without a heat sink. This same laser produces 19 mW cw when cooled slightly below room temperature. In addition, we present a 9 mW cw laser with a threshold voltage of 1.6 V, and series resistance of 18-OMEGA. These are the first surface-emitting lasers fabricated by phase-locked epitaxy. They are also believed to be the highest power and lowest threshold voltage electrically pumped vertical-cavity structures reported to date. These results establish that phase-locked epitaxy has important applications in the fabrication of surface-emitting lasers and many other structures with similar materials requirements.

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页码：2079 / 2081

页数：3

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