SUBMILLIAMP THRESHOLD VERTICAL-CAVITY LASER-DIODES

被引:100
作者
GEELS, RS
COLDREN, LA
机构
[1] Department of Electrical and Computer Engineering, University of California, Santa Barbara
关键词
D O I
10.1063/1.103361
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report for the first time room-temperature, continuous-wave operation of individual vertical-cavity laser diodes with submilliampere threshold currents. A single quantum well active region emitting at 979 nm surrounded by GaAs/AlAs Bragg reflector mirrors was used. Threshold currents were as low as 0.7 mA. A record low linewidth-power product of 5 MHz mW and a linewidth as narrow as 85 MHz was measured. High yield and good uniformity were demonstrated.
引用
收藏
页码:1605 / 1607
页数:3
相关论文
共 16 条
[1]  
Botez D., 1989, IEEE Photonics Technology Letters, V1, P205, DOI 10.1109/68.36043
[2]   PHASE-COUPLED 2-DIMENSIONAL ALXGA1-XAS-GAAS VERTICAL-CAVITY SURFACE-EMITTING LASER ARRAY [J].
DEPPE, DG ;
VANDERZIEL, JP ;
CHAND, N ;
ZYDZIK, GJ ;
CHU, SNG .
APPLIED PHYSICS LETTERS, 1990, 56 (21) :2089-2091
[3]   LOW THRESHOLD PLANARIZED VERTICAL-CAVITY SURFACE-EMITTING LASERS [J].
GEELS, RS ;
CORZINE, SW ;
SCOTT, JW ;
YOUNG, DB ;
COLDREN, LA .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (04) :234-236
[4]   BURIED HETEROSTRUCTURE GAAS/GAALAS DISTRIBUTED BRAGG REFLECTOR SURFACE EMITTING LASER WITH VERY LOW THRESHOLD (5.2 MA) UNDER ROOM-TEMPERATURE CW CONDITIONS [J].
IBARAKI, A ;
KAWASHIMA, K ;
FURUSAWA, K ;
ISHIKAWA, T ;
YAMAGUCHI, T ;
NIINA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (04) :L667-L668
[5]   SURFACE EMITTING SEMICONDUCTOR-LASERS [J].
IGA, K ;
KOYAMA, F ;
KINOSHITA, S .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (09) :1845-1855
[6]   SURFACE-EMITTING MICROLASERS FOR PHOTONIC SWITCHING AND INTERCHIP CONNECTIONS [J].
JEWELL, JL ;
LEE, YH ;
SCHERER, A ;
MCCALL, SL ;
OLSSON, NA ;
HARBISON, JP ;
FLOREZ, LT .
OPTICAL ENGINEERING, 1990, 29 (03) :210-214
[7]  
KARIN JR, 1990, CLEO 90 ANAHEIM
[8]   SEMICONDUCTOR-LASERS FOR COHERENT OPTICAL FIBER COMMUNICATIONS [J].
KOCH, TL ;
KOREN, U .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1990, 8 (03) :274-293
[9]   ROOM-TEMPERATURE CONTINUOUS-WAVE VERTICAL-CAVITY SINGLE-QUANTUM-WELL MICROLASER DIODES [J].
LEE, YH ;
JEWELL, JL ;
SCHERER, A ;
MCCALL, SL ;
HARBISON, JP ;
FLOREZ, LT .
ELECTRONICS LETTERS, 1989, 25 (20) :1377-1378
[10]  
LEE YH, 1990, ELECTRON LETT, V26, P226