SURFACE EMITTING SEMICONDUCTOR-LASERS

被引：566

作者：

IGA, K

KOYAMA, F

KINOSHITA, S

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1988年 / 24卷 / 09期

关键词：

D O I：

10.1109/3.7126

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1845 / 1855

页数：11

相关论文

共 43 条

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[7] LASING CHARACTERISTICS OF IMPROVED GAINASP-INP SURFACE EMITTING INJECTION-LASERS
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[8] STACKED PLANAR OPTICS - AN APPLICATION OF THE PLANAR MICROLENS
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[9] ROOM-TEMPERATURE PULSED OSCILLATION OF GAALAS GAAS SURFACE EMITTING INJECTION-LASER
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