FUTURE-TRENDS IN FREQUENCY-SELECTIVE OPTICAL MEMORIES

被引：4

作者：

AO, R ^{[1
]}

KUMMERL, L ^{[1
]}

HAARER, D ^{[1
]}

机构：

[1] UNIV BAYREUTH,BIMF,D-95440 BAYREUTH,GERMANY

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 11B期

关键词：

HOLE-BURNING; FREQUENCY MULTIPLEXING; LASER DIODE; OPTICAL STORAGE;

D O I：

10.1143/JJAP.32.5248

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Several recent advances are reported in a study of a possible technical implementation of frequency-selective optical memories. After taking into account some engineering considerations, such memories can be constructed which have the potential of being operated at room temperature, with a gain of a factor of at least 10, most likely in both storage density and access rate, as compared to conventional optical memories.

引用

页码：5248 / 5251

页数：4

共 7 条

[1]

CASTRO G, 1978, Patent No. 4101976

[2] FABRICATION AND CHARACTERISTICS OF GAAS-ALGAAS TUNABLE LASER-DIODES WITH DBR AND PHASE-CONTROL SECTIONS INTEGRATED BY COMPOSITIONAL DISORDERING OF A QUANTUM-WELL [J].