ELECTRICAL-PROPERTIES OF THERMAL OXIDE GROWN USING DRY OXIDATION ON P-TYPE 6H-SILICON CARBIDE

The electrical properties of thermal oxides grown on p-type 6H-silicon carbide were investigated during this work. Thermal oxides were grown on 7x10(15) cm(-3) aluminum doped p-type 6H-silicon carbide at 1275 degrees C in a dry oxygen ambient. Capacitance-voltage measurement indicated the presence of a large positive charge in the oxide. The interface state density and effective charge density for these oxides was estimated to be 1x10(11) cm(-2) eV(-1) and 8X10(12) cm(-2) respectively. Bias temperature stress measurement showed the presence of negative bias stress instability and slow trapping. (C) 1994 American Institute of Physics.