LONG-TERM HALL-TYPE CONVERSION BY VACANCY DIFFUSION IN HG1-XCDX TE AT ROOM-TEMPERATURE

被引：35

作者：

NIMTZ, G

SCHLICHT, B

DORNHAUS, R

机构：

[1] II. Physikalisches Institut der Universität zu Köln, 5000 Köln 41

[2] Department of Engineering and Applied Science, Yale University, New Haven

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 08期

关键词：

D O I：

10.1063/1.90859

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Drastic long-term changes of transport properties and the recombination behavior of a Hg1-xCdxTe crystal are reported. Being pure n-type material immediately after fabrication the crystal showed a p-type conduction after a five-year storage under room-temperature conditions. The lifetime - formerly dominated by Auger recombination - dropped by about two orders of magnitude. A model of Hg vacancy diffusion is suggested to explain the observed data.

引用

页码：490 / 491

页数：2

共 7 条

[1] MAGNETIC QUANTUM OSCILLATIONS IN AUGER TRANSITION RATE
DORNHAUS, R
MULLER, KH
NIMTZ, G
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[2] DORNHAUS R, 1978, THESIS U KOLN
[3] Dornhaus R., 1976, SPRINGER TRACTS MODE, V78
[4] CARRIER FREEZE-OUT AND ACCEPTOR ENERGIES IN P-TYPE HG1-XCDXTE
ELLIOTT, CT
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1972, 33 (08) : 1527 - &
[5] PRESSURE-TEMPERATURE PHASE-DIAGRAMS OF HGTE AND HG1-XCDXTE SYSTEMS
FARRAR, RA
GILLHAM, CJ
BARTLETT, B
QUELCH, M
[J]. JOURNAL OF MATERIALS SCIENCE, 1977, 12 (04) : 836 - 838
[6] TRANSIENT CARRIER DECAY AND TRANSPORT PROPERTIES IN HG1-X CDXTE
NIMTZ, G
BAUER, G
DORNHAUS, R
MULLER, KH
[J]. PHYSICAL REVIEW B, 1974, 10 (08) : 3302 - 3310
[7] SCHMIT JL, 1977, J ELECTRON MATER, V6, P25

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