X-BAND FET OSCILLATOR WITH LOW FM NOISE

被引:6
作者
FINLAY, HJ
JOSHI, JS
CRIPPS, SC
机构
关键词
D O I
10.1049/el:19780132
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:198 / 199
页数:2
相关论文
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[4]   DESIGN AND PERFORMANCE OF X-BAND OSCILLATORS WITH GAAS SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS [J].
MAEDA, M ;
KIMURA, K ;
KODERA, H .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1975, 23 (08) :661-667
[5]   COMMON-GATE GAAS FET OSCILLATOR [J].
OMORI, M ;
NISHIMOTO, C .
ELECTRONICS LETTERS, 1975, 11 (16) :369-371
[6]  
RUTTAN T, 1977, MICROWAVES JUL, P42