DESIGN AND PERFORMANCE OF X-BAND OSCILLATORS WITH GAAS SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS

被引：37

作者：

MAEDA, M ^{[1
]}

KIMURA, K ^{[1
]}

KODERA, H ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI 185,TOKYO,JAPAN

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1975年 / 23卷 / 08期

关键词：

D O I：

10.1109/TMTT.1975.1128645

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：661 / 667

页数：7

共 20 条

[1]

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[2]

ASHLEY JR, 1970, 1970 IEEE GMTT INT M, P161

[3] SI AND GAAS 0.5 MUM-GATE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J].

BAECHTOLD, W ;

DAETWYLE.K ;

FORSTER, T ;

MOHR, TO ;

WALTER, W ;

WOLF, P .

ELECTRONICS LETTERS, 1973, 9 (10) :232-234

[4] X-BAND AND KU-BAND AMPLIFIERS WITH GAAS SCHOTTKY-BARRIERS FIELD-EFFECT TRANSISTORS [J].

BAECHTOLD, W .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1973, SC 8 (01) :54-58

[5] STABLE MICROWAVE INTEGRATED-CIRCUIT X-BAND GUNN OSCILLATOR [J].

CHAN, CK ;

COLE, RS .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1974, MT22 (08) :815-815

[6] TEMPERATURE STABILITY OF AN MIC GUNN-EFFECT OSCILLATOR [J].

COHEN, J ;

GILDEN, M .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1973, MT21 (02) :115-116

[7]

FUKUTA M, 1973, 1973 ISSCC, P84

[8]

GEWARTOWASKI WJ, 1968, P IEEE LETTERS, V56, P1139

[9]

Gonda J., 1972, 1972 IEEE GMTT International Microwave Symposium, P110, DOI 10.1109/GMTT.1972.1123012

[10] NOISE SPECTRA OF READ DIODE AND GUNN OSCILLATORS [J].

JOSENHANS, J .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (10) :1478-+

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