ANALYTICAL EXPRESSIONS FOR TUNNEL CURRENTS IN METAL-INSULATOR-METAL (MIM) AND METAL-INSULATOR-SEMICONDUCTOR (MIS) STRUCTURES IN A 2-BAND MODEL

被引：6

作者：

HABIB, SED

SIMMONS, JG

机构：

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 01期

关键词：

D O I：

10.1016/0038-1101(80)90173-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：87 / 92

页数：6

共 12 条

[1]

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[3]

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[4]

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[5]

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[8] DIRECT INTERELECTRODE TUNNELING IN GASE [J].

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[9] EFFECT OF BAND-STRUCTURE ON VOLTAGE-CURRENT CHARACTERISTICS OF METAL-INSULATOR-METAL TUNNEL JUNCTIONS [J].

SARNOT, SL ;

DUBEY, PK .

SOLID-STATE ELECTRONICS, 1972, 15 (07) :745-&

[10] THEORETICAL TUNNELING CURRENT CHARACTERISTICS OF SIS (SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR) DIODE [J].

SHEWCHUN, J ;

TEMPLE, VAK .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) :5051-5061

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