THEORETICAL TUNNELING CURRENT CHARACTERISTICS OF SIS (SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR) DIODE

被引：14

作者：

SHEWCHUN, J

TEMPLE, VAK

机构：

[1] MCMASTER UNIV, DEPT ENGN PHYS, HAMILTON, ONTARIO, CANADA

[2] MCMASTER UNIV, INST MAT RES, HAMILTON, ONTARIO, CANADA

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 12期

关键词：

D O I：

10.1063/1.1661069

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5051 / 5061

页数：11

共 26 条

[1] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON [J].

BARBER, HD .

SOLID-STATE ELECTRONICS, 1967, 10 (11) :1039-&

[2] SPACE-CHARGE EFFECTS ON ELECTRON TUNNELING [J].

BENDANIEL, DJ ;

DUKE, CB .

PHYSICAL REVIEW, 1966, 152 (02) :683-+

[3]

BONCHBRUYEVITCH VL, 1966, ELECTRONIC THEORY HE

[4] DIRECT CALCULATION OF TUNNELLING CURRENT .2. FREE ELECTRON DESCRIPTION [J].

CAROLI, C ;

COMBESCOT, R ;

LEDERER, D ;

NOZIERES, P ;

SAINTJAM.D .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (16) :2598-+

[5] NON-EQUILIBRIUM EFFECTS ON METAL-OXIDE-SEMICONDUCTOR TUNNEL CURRENTS [J].

CLARKE, RA ;

SHEWCHUN, J .

SOLID-STATE ELECTRONICS, 1971, 14 (10) :957-&

[6]

DUKE CB, 1969, TUNNELLING PHENOMENA

[7] NEW PHENOMENON IN NARROW GERMANIUM PARA-NORMAL-JUNCTIONS [J].

ESAKI, L .

PHYSICAL REVIEW, 1958, 109 (02) :603-604

[8] NEW TYPE OF NEGATIVE RESISTANCE IN BARRIER TUNNELING [J].

ESAKI, L ;

STILES, PJ .

PHYSICAL REVIEW LETTERS, 1966, 16 (24) :1108-&

[9] THEORY OF ELECTRON TUNNELING IN SEMICONDUCTOR JUNCTIONS [J].

FREDKIN, DR ;

WANNIER, GH .

PHYSICAL REVIEW, 1962, 128 (05) :2054-&

[10] THEORY OF TUNNELING INTO INTERFACE STATES [J].

FREEMAN, LB ;

DAHLKE, WE .

SOLID-STATE ELECTRONICS, 1970, 13 (11) :1483-+

← 1 2 3 →