THE GROWTH OF SILICON TUBES BY THE EFG PROCESS

被引：18

作者：

ERISS, L

STORMONT, RW

SUREK, T

TAYLOR, AS

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1980年 / 50卷 / 01期

关键词：

D O I：

10.1016/0022-0248(80)90244-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：200 / 211

页数：12

共 13 条

[1]

BATES HE, 1975, 10TH P IEEE PHOT SPE, P197

[2]

BATES HE, 1972, 9TH P IEEE PHOT SPEC, P386

[3] MELT GROWTH OF CRYSTALLINE SILICON TUBES BY A CAPILLARY ACTION SHAPING TECHNIQUE [J].

CISZEK, TF .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 32 (02) :521-527

[4] HIGH-SPEED EFG OF WIDE SILICON RIBBON [J].

KALEJS, JP ;

MACKINTOSH, BH ;

SUREK, T .

JOURNAL OF CRYSTAL GROWTH, 1980, 50 (01) :175-192

[5] GROWTH OF CONTROLLED PROFILE CRYSTALS FROM MELT .1. -SAPPHIRE FILAMENTS [J].

LABELLE, HE ;

MLAVSKY, AI .

MATERIALS RESEARCH BULLETIN, 1971, 6 (07) :571-&

[6]

LABELLE HE, 1971, Patent No. 3591348

[7]

Mlavsky A. I., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P160

[8]

MLAVSKY AI, 1976, Patent No. 3976508

[9] THERMAL SENSITIVITY AND STABILITY OF EFG SILICON RIBBON GROWTH [J].

SACHS, EM .

JOURNAL OF CRYSTAL GROWTH, 1980, 50 (01) :102-113

[10] THEORY OF SHAPE STABILITY IN CRYSTAL-GROWTH FROM MELT [J].

SUREK, T .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (10) :4384-4393

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