MELT GROWTH OF CRYSTALLINE SILICON TUBES BY A CAPILLARY ACTION SHAPING TECHNIQUE

被引：8

作者：

CISZEK, TF ^{[1
]}

机构：

[1] IBM CORP,E FISHKILL LABS,HOPEWELL JUNCTION,NY 12533

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 32卷 / 02期

关键词：

D O I：

10.1002/pssa.2210320222

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：521 / 527

页数：7

共 9 条

[1] GROWTH OF WIDE, FLAT CRYSTALS OF SILICON WEB [J].

BARRETT, DL ;

MYERS, EH ;

HAMILTON, DR ;

BENNETT, AI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) :952-&

[2]

BOATMAN JC, 1967, ELECTROCHEM TECHNOL, V5, P98

[3] EDGE-DEFINED, FILM-FED GROWTH (EFG) OF SILICON RIBBONS [J].

CISZEK, TF .

MATERIALS RESEARCH BULLETIN, 1972, 7 (08) :731-&

[4] GROWTH AND CHARACTERIZATION OF SILICON RIBBONS PRODUCED BY A CAPILLARY ACTION SHAPING TECHNIQUE [J].

CISZEK, TF ;

SCHWUTTKE, GH .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1975, 27 (01) :231-241

[5]

DERMATIS SN, 1963, IEEE T COMMUN ELECTR, V82, P94

[6] PREPARATION AND PROPERTIES OF CVD-SILICON TUBES AND BOATS FOR SEMICONDUCTOR-DEVICE TECHNOLOGY [J].

DIETZE, W ;

HUNT, LP ;

SAWYER, DH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (08) :1112-1115

[7] GROWTH OF CONTROLLED PROFILE CRYSTALS FROM MELT .2. EDGE-DEFINED, FILM-FED GROWTH (EFG) [J].

LABELLE, HE .

MATERIALS RESEARCH BULLETIN, 1971, 6 (07) :581-&

[8]

STEPANOV AV, 1959, ZH TEKH FIZ, V29, P381

[9] EFG PROCESS APPLIED TO GROWTH OF SILICON RIBBONS [J].

SWARTZ, JC ;

SUREK, T ;

CHALMERS, B .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (02) :255-279

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