EFG PROCESS APPLIED TO GROWTH OF SILICON RIBBONS

被引：76

作者：

SWARTZ, JC ^{[1
]}

SUREK, T ^{[1
]}

CHALMERS, B ^{[1
]}

机构：

[1] TYCO LABS INC,WALTHAM,MA 02154

来源：

关键词：

D O I：

10.1007/BF02655405

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：255 / 279

页数：25

共 40 条

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[3] BATES HE, 1972, 9TH P IEEE PHOT SPEC, P386
[4] BATES HE, UNPUBLISHED RESEARCH
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[6] BOATMAN JC, 1967, ELECTROCHEM TECHNOL, V5, P98
[7] BOLLING GF, 1956, CAN J PHYS, V34, P234
[8] BORLE WN, 1972, INDIAN J PURE AP PHY, V10, P315
[9] WETTING OF REFRACTORY MATERIALS BY MOLTEN METALLIDES
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ALLEN, S
[J]. JOURNAL OF MATERIALS SCIENCE, 1973, 8 (03) : 423 - 426
[10] EDGE-DEFINED, FILM-FED GROWTH (EFG) OF SILICON RIBBONS
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[J]. MATERIALS RESEARCH BULLETIN, 1972, 7 (08) : 731 - &