ROLE OF CLADDING LAYER THICKNESSES ON STRAINED-LAYER INGAAS/GAAS SINGLE AND MULTIPLE-QUANTUM-WELL LASERS

被引：17

作者：

LIU, DC ^{[1
]}

LEE, CP ^{[1
]}

TSAI, CM ^{[1
]}

LEI, TF ^{[1
]}

TSANG, JS ^{[1
]}

CHIANG, WH ^{[1
]}

TU, YK ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU 30039,TAIWAN

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 12期

关键词：

D O I：

10.1063/1.353917

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influences of cladding layer thicknesses on the performance of strained-layer InGaAs/GaAs graded-index separated confinement heterostructure quantum well lasers have been studied. The waveguiding property of the laser structure was analyzed using the transfer matrix method. In this work, experimental results and the calculated results showed that threshold current densities and external quantum efficiencies both were crucially dependent on the thicknesses of cladding layer for both single and multiple quantum well lasers. The minimum cladding layer thicknesses needed to maintain low threshold current densities and low internal total loss for both single and multiple quantum well devices were determined experimentally and theoretically.

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页码：8027 / 8034

页数：8

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