HIGH-POWER INGAAS/GAAS LASER ARRAY

The fabrication and performance characteristics of Ino.2Gao.8As/GaAs gain guided laser arrays emitting near 1 ftm are reported. The multiquantum well active region has three wells and is grown by molecular beam epitaxy. The 1 mm long lasers have a broad area threshold current density of 90 A/cm2. The estimated transparency current density per well from the measured threshold current density against cavity length data is 22 A/cm2. The ten-stripe coupled laser arrays have been operated to pulsed output powers of 4W and CW output power of 1 W. © 1990, The Institution of Electrical Engineers. All rights reserved.