PHASE-LOCKED (GAAL)AS LASER DIODE EMITTING 2.6 W CW FROM A SINGLE MIRROR

被引：152

作者：

SCIFRES, DR

LINDSTROM, C

BURNHAM, RD

STREIFER, W

PAOLI, TL

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 05期

关键词：

D O I：

10.1049/el:19830118

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：169 / 171

页数：3

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[1] LOW-THRESHOLD SINGLE QUANTUM WELL (60 A) GAAIAS LASERS GROWN BY MO-CVD WITH MG AS P-TYPE DOPANT
BURNHAM, RD
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[J]. ELECTRONICS LETTERS, 1982, 18 (25-2) : 1095 - 1097
[2] LIMITATIONS OF POWER OUTPUTS FROM CONTINUOUSLY OPERATING GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE LASERS
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[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 785 - 786
[3] PREPARATION AND PROPERTIES OF GA1-XALXAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (03) : 128 - 135
[4] THRESHOLD TEMPERATURE CHARACTERISTICS OF DOUBLE HETEROSTRUCTURE GA1-XALXAS LASERS
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[5] CW LONGITUDINAL MODE SPECTRA OF MULTIPLE QUANTUM WELL STRIPE LASERS
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[J]. ELECTRONICS LETTERS, 1982, 18 (20) : 876 - 878
[6] ONE WATT CW VISIBLE SINGLE-QUANTUM-WELL LASERS
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[J]. ELECTRONICS LETTERS, 1983, 19 (03) : 80 - 81
[7] LATERAL BEAM COLLIMATION OF A PHASED-ARRAY SEMICONDUCTOR-LASER
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[J]. APPLIED PHYSICS LETTERS, 1982, 41 (07) : 614 - 616
[8] LATERAL GRATING ARRAY HIGH-POWER CW VISIBLE SEMICONDUCTOR-LASER
SCIFRES, DR
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STREIFER, W
[J]. ELECTRONICS LETTERS, 1982, 18 (13) : 549 - 550
[9] HIGH-POWER COUPLED MULTIPLE STRIPE QUANTUM WELL INJECTION-LASERS
SCIFRES, DR
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[J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 118 - 120
[10] EXPERIMENTAL AND ANALYTIC STUDIES OF COUPLED MULTIPLE STRIPE DIODE-LASERS
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (09) : 917 - 922