GAIN CHARACTERISTICS OF STRAINED QUANTUM WELL LASERS

被引：51

作者：

WELCH, DF

STREIFER, W

SCHAUS, CF

SUN, S

GOURLEY, PL

机构：

[1] UNIV NEW MEXICO,CTR HIGH TECHNOL MAT,ALBUQUERQUE,NM 87131

[2] SANDIA NATL LABS,ALBUQUERQUE,NM 87175

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 01期

关键词：

D O I：

10.1063/1.102647

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaAs/AlGaAs laser diode arrays fabricated with differing amounts of In in the quantum well active layer are characterized by threshold currents of 115 A/cm2, transparency currents of 50 A/cm2, optical losses of 3 cm-1, and wavelengths to 960 nm for In compositions of 20%. Gain coefficient measurements indicate an increase from 0.0535 to 0.0691 cm μm/A for quantum well lasers with 0% InAs and 10-20% InAs, respectively. The maximum output power achieved for a device with a 100 μm aperture is 3 W cw.

引用

页码：10 / 12

页数：3

共 14 条

[1] BAND-STRUCTURE ENGINEERING FOR LOW-THRESHOLD HIGH-EFFICIENCY SEMICONDUCTOR-LASERS
ADAMS, AR
[J]. ELECTRONICS LETTERS, 1986, 22 (05) : 249 - 250
[2] CHONG TC, 1989, J QUANTUM ELECTRON, V25, P171
[3] GRADED-INDEX SEPARATE-CONFINEMENT INGAAS/GAAS STRAINED-LAYER QUANTUM-WELL LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
FEKETA, D
CHAN, KT
BALLANTYNE, JM
EASTMAN, LF
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (24) : 1659 - 1660
[4] LONG-LIVED INGAAS QUANTUM WELL LASERS
FISCHER, SE
WATERS, RG
FEKETE, D
BALLANTYNE, JM
CHEN, YC
SOLTZ, BA
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (19) : 1861 - 1862
[5] LASING TRANSITIONS IN GAAS/GAAS1-XPX STRAINED-LAYER SUPERLATTICES WITH X=0.1-0.5
GOURLEY, PL
HOHIMER, JP
BIEFELD, RM
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (06) : 552 - 554
[6] JONES ED, 1988, PHYS REV LETT, V61, P265
[7] STRAINED-LAYER QUANTUM-WELL INJECTION-LASER
LAIDIG, WD
CALDWELL, PJ
LIN, YF
PENG, CK
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (07) : 653 - 655
[8] PROPERTIES OF INXGA1-XAS-GAAS STRAINED-LAYER QUANTUM-WELL-HETEROSTRUCTURE INJECTION-LASERS
LAIDIG, WD
LIN, YF
CALDWELL, PJ
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (01) : 33 - 38
[9] OHTOSHI T, 1989, PHOTO TECHNOL LETT, V1, P117
[10] CONTINUOUS OPERATION OF HIGH-POWER (200 MW) STRAINED-LAYER GA1-XINXAS/GAAS QUANTUM-WELL LASERS WITH EMISSION WAVELENGTHS 0.87 LESS-THAN-OR-EQUAL TO LAMBDA LESS-THAN-OR-EQUAL TO 0.95 MU-M
STUTIUS, W
GAVRILOVIC, P
WILLIAMS, JE
MEEHAN, K
ZARRABI, JH
[J]. ELECTRONICS LETTERS, 1988, 24 (24) : 1493 - 1494

← 1 2 →