THE EFFECT OF SURFACE RECOMBINATION ON PIN DIODES

被引：11

作者：

AITCHISON, JM ^{[1
]}

BERZ, F ^{[1
]}

机构：

[1] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 09期

关键词：

D O I：

10.1016/0038-1101(81)90094-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：795 / 804

页数：10

共 12 条

[1]

AITCHISON J, UNPUBLISHED

[2] STEP RECOVERY OF P-I-N-DIODES [J].

BERZ, F .

SOLID-STATE ELECTRONICS, 1979, 22 (11) :927-932

[3]

CHOO SC, 1970, T IEEEE ED, V17, P647

[4]

COOPER R, 1979, 9TH EUR SOL STAT DEV, P26

[5] SPATIAL-DISTRIBUTION OF RECOMBINATION IN ALLOYED SILICON-PSN-RECTIFIERS BY LOADING IN A FORWARD DIRECTION [J].

DANNHAUSER, F ;

KRAUSSE, J .

SOLID-STATE ELECTRONICS, 1973, 16 (08) :861-873

[6] RADIATIVE RECOMBINATION RATE IN SILICON [J].

GERLACH, W ;

SCHLANGENOTTO, H ;

MAEDER, H .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 13 (01) :277-+

[7] POWER RECTIFIERS AND TRANSISTORS [J].

HALL, RN .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1512-1518

[8] FORWARD CHARACTERISTIC OF SILICON POWER RECTIFIERS AT HIGH CURRENT DENSITIES [J].

HERLET, A .

SOLID-STATE ELECTRONICS, 1968, 11 (08) :717-&

[9]

Kemmer N., 1977, VECTOR ANAL

[10] THE EFFECTS OF STORAGE TIME VARIATIONS ON THE FORWARD RESISTANCE OF SILICON P+-N-N+ DIODES AT MICROWAVE-FREQUENCIES [J].

MARTINELLI, RU ;

ROSEN, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (09) :1728-1732

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