THE EFFECTS OF STORAGE TIME VARIATIONS ON THE FORWARD RESISTANCE OF SILICON P+-N-N+ DIODES AT MICROWAVE-FREQUENCIES

被引：14

作者：

MARTINELLI, RU

ROSEN, A

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 09期

关键词：

D O I：

10.1109/T-ED.1980.20094

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1728 / 1732

页数：5

共 20 条

[1] REVERSE RECOVERY PROCESSES IN SILICON POWER RECTIFIERS [J].

BENDA, H ;

SPENKE, E .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08) :1331-&

[2] MINORITY CARRIER LIFETIME IN P-N JUNCTION DEVICES [J].

BYCZKOWSKI, M ;

MADIGAN, JR .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (08) :878-881

[3]

CORNU J, 1973, IEEE T ELECTRON DEV, V20, P348

[4] DEPENDENCE OF CARRIER MOBILITY IN SILICON ON CONCENTRATION OF FREE CHARGE-CARRIERS .1. [J].

DANNHAUSER, F .

SOLID-STATE ELECTRONICS, 1972, 15 (12) :1371-+

[5]

HEWLETT A, 1968, SOLID STATE ELECTRON, V11, P717

[6] AN EXPERIMENTAL DETERMINATION OF THE CARRIER LIFETIME IN P-I-N DIODES FROM THE STORED CARRIER CHARGE [J].

HOFFMANN, A ;

SCHUSTER, K .

SOLID-STATE ELECTRONICS, 1964, 7 (10) :717-724

[7] P+IN+ SILICON DIODES AT HIGH FORWARD CURRENT DENSITIES [J].

HOWARD, NR ;

JOHNSON, GW .

SOLID-STATE ELECTRONICS, 1965, 8 (03) :275-&

[8] ANALYSIS + CHARACTERIZATION OF P-N JUNCTION DIODE SWITCHING [J].

KUNO, HJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (01) :8-&

[9] TRANSIENT RESPONSE OF A P-N JUNCTION [J].

LAX, B ;

NEUSTADTER, SF .

JOURNAL OF APPLIED PHYSICS, 1954, 25 (09) :1148-1154

[10]

MARTINELLI RU, 1978 IEDM TECH DIG, P556

← 1 2 →