IMPROVEMENTS IN CRYSTALLINE QUALITY OF PBXSN1-XTE CRYSTALS GROWN BY VAPOR TRANSPORT IN A CLOSED SYSTEM

被引：20

作者：

PARKER, SG ^{[1
]}

机构：

[1] TEXAS INSTR INC,CENT RES LABS,DALLAS,TX 75222

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1976年 / 5卷 / 05期

关键词：

D O I：

10.1007/BF02654340

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：497 / 511

页数：15

共 12 条

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PASKO, JG ;

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APPLIED PHYSICS LETTERS, 1972, 21 (06) :285-&

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ANTCLIFFE, GA ;

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[3]

ANTCLIFFE GA, 1971, 205 EL SOC ABST, P521

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[5] P-N-JUNCTION PHOTODIODES IN PBTE PREPARED BY SB+ ION IMPLANTATION [J].

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FOYT, AG ;

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APPLIED PHYSICS LETTERS, 1972, 20 (08) :279-&

[6] HORIZONTAL UNSEEDED VAPOR GROWTH OF IV-VI COMPOUNDS AND ALLOYS [J].

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MCVITTIE, JP .

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[7]

MORRIS HB, 1975, MAR P IRIS SPEC FT M

[8] AN ELECTROLYTIC POLISH AND ETCH FOR LEAD TELLURIDE [J].

NORR, MK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (05) :433-434

[9] NEW METHOD FOR GROWTH OF PB1-XSNXTE SINGLE-CRYSTALS [J].

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SOLID STATE COMMUNICATIONS, 1974, 15 (03) :449-452

[10] GROWTH OF LARGE CRYSTALS OF (PB,GE)TE AND (PB,SN)TE [J].

PARKER, SG ;

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JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (04) :731-746

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