GALLIUM-ARSENIDE PHOTO-MESFETS

被引：12

作者：

LAKSHMI, B ^{[1
]}

CHALAPATI, K ^{[1
]}

SRIVASTAVA, AK ^{[1
]}

ARORA, BM ^{[1
]}

SUBRAMANIAN, S ^{[1
]}

SHARMA, DK ^{[1
]}

机构：

[1] TATA INST FUNDAMENTAL RES,BOMBAY 400005,INDIA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 06期

关键词：

D O I：

10.1109/16.106251

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Response of normally off GaAs photo-MESFET’s has been investigated in two modes: i) the normal mode in which the photon energy is greater than the bandgap and the light intensity is sufficient to bias the device above turn-on threshold, and ii) the subthreshold mode with subbandgap photon energy illumination. In the second mode, the transistor operates by internal photoemission from metal gate to the semiconductor. In the normal mode, the square root of the drain photocurrent varies as logarithm of the incident light intensity. The device characteristics for subbandgap illumination have been analyzed for the first time and we show that the photocurrent varies linearly with light intensity in this mode. © 1990 IEEE

引用

页码：1533 / 1535

页数：3

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[5]

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[6]

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