SUPPRESSION OF MOBILE ION RELATED INSTABILITY IN MO-GATE MOS STRUCTURES

[1] GHOSHTAGORE RN, 1975, SOLID STATE ELECTRON, V18, P399, DOI 10.1016/0038-1101(75)90041-6

[2] ISHIKAWA H, 1979, IEDM TECH DIGEST, P358

[3] STABILIZATION OF SIO2 PASSIVATION LAYERS WITH P2O5 [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 376 - &

[4] KOMIYA Y, 1966, B ELECTROTECH LAB, V30, P34

[5] HIGH-SPEED MOLYBDENUM GATE MOS RAM [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (05) : 611 - 616

[6] KOYANAGI M, 1979, ELECTROCHEMICAL SOC, P409

[7] PHASE-SEPARATION AND SODIUM PASSIVATION IN SILICON-OXIDES GROWN IN HCI-O2 AMBIENTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) : 1129 - 1134

[8] OHGISHI T, 1978, IEEE J SOLID STATE C, V13, P355

[9] OWEN AE, 1959, J SOC GLASS TECHNOL, V43, P159

[10] MOBILE SODIUM ION PASSIVATION IN HCL OXIDES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (01) : 149 - 154

[1] GHOSHTAGORE RN, 1975, SOLID STATE ELECTRON, V18, P399, DOI 10.1016/0038-1101(75)90041-6

[2] ISHIKAWA H, 1979, IEDM TECH DIGEST, P358

[3] STABILIZATION OF SIO2 PASSIVATION LAYERS WITH P2O5 [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) : 376 - &

[4] KOMIYA Y, 1966, B ELECTROTECH LAB, V30, P34

[5] HIGH-SPEED MOLYBDENUM GATE MOS RAM [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1978, 13 (05) : 611 - 616

[6] KOYANAGI M, 1979, ELECTROCHEMICAL SOC, P409

[7] PHASE-SEPARATION AND SODIUM PASSIVATION IN SILICON-OXIDES GROWN IN HCI-O2 AMBIENTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) : 1129 - 1134

[8] OHGISHI T, 1978, IEEE J SOLID STATE C, V13, P355

[9] OWEN AE, 1959, J SOC GLASS TECHNOL, V43, P159

[10] MOBILE SODIUM ION PASSIVATION IN HCL OXIDES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (01) : 149 - 154