HIGH-BRIGHTNESS INGAALP GREEN LIGHT-EMITTING-DIODES

被引：71

作者：

SUGAWARA, H ^{[1
]}

ITAYA, K ^{[1
]}

NOZAKI, H ^{[1
]}

HATAKOSHI, G ^{[1
]}

机构：

[1] TOSHIBA CO LTD,DIV SEMICOND,SAIWAI KU,KAWASAKI 210,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 15期

关键词：

D O I：

10.1063/1.108423

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Candela class InGaAlP surface-emission green light-emitting diodes (LEDs) have been successfully fabricated. The growth of InGaAlP on an intentionally misoriented substrate improved emission properties, as confirmed by a quantitative estimation of the diffusion length in the active material. A Bragg reflector using InGaAlP was realized for the first time. A new device structure, including this Bragg reflector, drastically improved the light extraction efficiency. An external quantum efficiency of 0.7% at 573 nm green light was obtained, corresponding to a luminous intensity of 2 cd.

引用

页码：1775 / 1777

页数：3

共 11 条

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