HIGH-EFFICIENCY INGAALP VISIBLE LIGHT-EMITTING-DIODES

被引：34

作者：

SUGAWARA, H

ITAYA, K

ISHIKAWA, M

HATAKOSHI, G

机构：

[1] Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki, 210

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 08期

关键词：

LED; INGAALP; MISORIENTED SUBSTRATE; PHOTOLUMINESCENCE; ELECTROLUMINESCENCE; EXTERNAL QUANTUM EFFICIENCY;

D O I：

10.1143/JJAP.31.2446

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new structure for InGaAlP light-emitting diodes (LEDs) which include a GaAlAs current-spreading layer has been designed. Remarkable improvements in external efficiency have been achieved using this structure. The photoluminescence and electroluminescence characteristics of high-Al-content InGaAlP alloys have been investigated. A GaAs substrate with an intentional surface misorientation from the nominally (100) plane towards the [011] direction was found to have a marked effect on the improvement of emission properties. The external quantum efficiency was 1.2% at 592 nm for an In0.5(Ga0.7Al0.3)0.5P active layer LED. These LEDs have been operated for more than 1500 hours at 80-degrees-C and 50 mA.

引用

页码：2446 / 2451

页数：6

共 24 条

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