SURFACE CONDUCTIVITY OF INSB (110) SURFACE DURING OXYGEN ADSORPTION

被引：14

作者：

KREUTZ, EW ^{[1
]}

RICKUS, E ^{[1
]}

SOTNIK, N ^{[1
]}

机构：

[1] TH DARMSTADT,PHYS INST 1,DARMSTADT,WEST GERMANY

来源：

PHYSICS LETTERS A | 1974年 / A 47卷 / 05期

关键词：

D O I：

10.1016/0375-9601(74)90129-7

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：363 / 364

页数：2

共 13 条

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[Anonymous], 1967, ATZPRAXIS HALBLEITER

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[3]

FRANKL DR, 1967, ELECTRICAL PROPERTIE

[4]

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[5] STRUCTURE AND ADSORPTION CHARACTERISTICS OF (III) AND (III-) SURFACE OF INSB CLEANED BY ION BOMBARDMENT AND ANNEALING [J].

HANEMAN, D .

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[6] SURFACE STRUCTURES AND PROPERTIES OF DIAMOND-STRUCTURE SEMICONDUCTORS [J].

HANEMAN, D .

PHYSICAL REVIEW, 1961, 121 (04) :1093-&

[7] FIELD EFFECT MEASUREMENTS ON A AND B (111) SURFACES OF INDIUM ANTIMONIDE [J].

HUFF, H ;

KAWAJI, S ;

GATOS, HC .

SURFACE SCIENCE, 1966, 5 (04) :399-&

[8] X-RAY INDUCED CONDUCTIVITY CHANGES IN INSB [J].

KREUTZ, EW ;

PAGNIA, H ;

WAIDELICH, W .

PHYSICA STATUS SOLIDI, 1968, 27 (02) :K111-+

[9]

MACRAE AU, 1964, J APPL PHYS, V35, P1629

[10]

Many A., 1965, SEMICONDUCTOR SURFAC

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