NEW RESULTS IN THE STUDY OF THE ALUMINUM EPITAXIAL-GROWTH ON GALLIUM ARSENIDE(001)

被引：24

作者：

MASSIES, J

CHAPLART, J

LINH, NT

机构：

[1] Thomson-CSF Central Research Laboratory, 91401 Orsay

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 32卷 / 08期

关键词：

D O I：

10.1016/0038-1098(79)90734-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Epitaxial growth of Al on (001) GaAs obtained by MBE has been studied in a large range of temperature and growth rate. The epitaxial relationship was found to be dependent on these growth parameters. Two types of growth, giving flat and facetted surfaces respectively, were noted to be solely dependent on the growth temperature. © 1979.

引用

页码：707 / 709

页数：3