SUBPICOSECOND, FREELY PROPAGATING ELECTROMAGNETIC PULSE GENERATION AND DETECTION USING GAAS-AS EPILAYERS

被引：112

作者：

WARREN, AC ^{[1
]}

KATZENELLENBOGEN, N ^{[1
]}

GRISCHKOWSKY, D ^{[1
]}

WOODALL, JM ^{[1
]}

MELLOCH, MR ^{[1
]}

OTSUKA, N ^{[1
]}

机构：

[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 14期

关键词：

D O I：

10.1063/1.105162

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using GaAs epilayers with arsenic precipitates (GaAs:As) as the photoconductive material in a broad-band optoelectronic terahertz beam system, we have generated and detected freely propagating, subpicosecond electromagnetic pulses. The receiver signal gave a measured integrated pulse width of 0.71 ps. Fast photoconductive rise times have been achieved which are characteristic of good mobility GaAs. In addition, the material exhibits a short "effective" carrier lifetime of several ps due to the embedded, closely spaced (about 20 nm) arsenic precipitates.

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页码：1512 / 1514

页数：3

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