STRUCTURAL-PROPERTIES OF AS-RICH GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES

被引:352
作者
KAMINSKA, M
LILIENTALWEBER, Z
WEBER, ER
GEORGE, T
KORTRIGHT, JB
SMITH, FW
TSAUR, BY
CALAWA, AR
机构
[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,CTR XRAY OPT,BERKELEY,CA 94720
[2] MIT,LINCOLN LAB,LEXINGTON,MA 02173
关键词
D O I
10.1063/1.101229
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1881 / 1883
页数:3
相关论文
共 15 条
  • [1] PHOTORESPONSE OF THE ASGA ANTISITE DEFECT IN AS-GROWN GAAS
    BAEUMLER, M
    KAUFMANN, U
    WINDSCHEIF, J
    [J]. APPLIED PHYSICS LETTERS, 1985, 46 (08) : 781 - 783
  • [2] BAJ M, 1989, 15TH P INT C DEF SEM, V38, P101
  • [3] Driscoll C.M.H., 1975, IOP C P GALL ARS REL, V24, P275
  • [4] SELECTIVE SATURATION OF PARAMAGNETIC DEFECTS IN ELECTRON-IRRADIATED AND NEUTRON-IRRADIATED GAAS
    GOLTZENE, A
    MEYER, B
    SCHWAB, C
    BEALL, RB
    NEWMAN, RC
    WHITEHOUSE, JE
    WOODHEAD, J
    [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5196 - 5198
  • [5] THE OBSERVATION OF HIGH-CONCENTRATIONS OF ARSENIC ANTI-SITE DEFECTS IN ELECTRON-IRRADIATED NORMAL-TYPE GAAS BY X-BAND ELECTRON-PARAMAGNETIC-RES
    GOSWAMI, NK
    NEWMAN, RC
    WHITEHOUSE, JE
    [J]. SOLID STATE COMMUNICATIONS, 1981, 40 (04) : 473 - 477
  • [6] ANTISITE-RELATED DEFECTS IN PLASTICALLY DEFORMED GAAS
    OMLING, P
    WEBER, ER
    SAMUELSON, L
    [J]. PHYSICAL REVIEW B, 1986, 33 (08): : 5880 - 5883
  • [7] NEW MBE BUFFER USED TO ELIMINATE BACKGATING IN GAAS-MESFETS
    SMITH, FW
    CALAWA, AR
    CHEN, CL
    MANFRA, MJ
    MAHONEY, LJ
    [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (02) : 77 - 80
  • [8] SMITH FW, 1988, DEC IEEE INT EL DEV
  • [9] TERASHIMA K, 1986, SEMIINSULATING 3 5 M, P187
  • [10] IDENTIFICATION OF EL2 IN GAAS
    VONBARDELEBEN, HJ
    STIEVENARD, D
    BOURGOIN, JC
    HUBER, A
    [J]. APPLIED PHYSICS LETTERS, 1985, 47 (09) : 970 - 972