IDENTIFICATION OF EL2 IN GAAS

被引：96

作者：

VONBARDELEBEN, HJ

STIEVENARD, D

BOURGOIN, JC

HUBER, A

机构：

[1] THOMSON CSF,CENT RES LAB,F-91401 ORSAY,FRANCE

[2] INST SUPER ELECTR NORD,F-59046 LILLE,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 09期

关键词：

D O I：

10.1063/1.95947

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：970 / 972

页数：3

共 9 条

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[2] IDENTIFICATION OF ASGA ANTISITE DEFECTS IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

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[3]

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[4] CHARGE-STATE-CONTROLLED STRUCTURAL RELAXATION OF THE EL2 CENTER IN GAAS [J].

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[5]

LIN AL, 1976, J APPL PHYS, V47, P1852, DOI 10.1063/1.322904

[6]

Makram-Ebeid S., 1984, Semi-Insulating III-V materials, P184

[7]

NEWMAN RC, UNPUB J PHYS C

[8] IRRADIATION-INDUCED DEFECTS IN GAAS [J].

PONS, D ;

BOURGOIN, JC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (20) :3839-3871

[9] FORMATION OF ASGA ANTISITE DEFECTS IN ELECTRON-IRRADIATED GAAS [J].

VONBARDELEBEN, HJ ;

BOURGOIN, JC .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :1041-1043

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