IRRADIATION-INDUCED DEFECTS IN GAAS

[1] LUMINESCENCE IN INTRINSIC AND ANNEALED ELECTRON-IRRADIATED GAAS - CD [J]. PHYSICAL REVIEW, 1969, 183 (03): : 777 - &

[2] RADIATIVE RECOMBINATION IN ANNEALED ELECTRON-IRRADIATED GAAS [J]. PHYSICAL REVIEW, 1966, 149 (02): : 679 - &

[3] ARNOLD GW, 1968, RAD EFFECTS SEMICOND, P435

[4] ANNEALING OF ELECTRON-IRRADIATED GAAS [J]. PHYSICAL REVIEW, 1962, 127 (05): : 1576 - &

[5] BACHELET GB, 1981, PHYS REV B, V24, P943

[6] THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J]. PHYSICAL REVIEW B, 1980, 21 (12): : 5662 - 5686

[7] BARAFF GA, 1984, COMMUNICATION

[8] EFFECTS OF CO-60 GAMMA IRRADIATION ON EPITAXIAL GAAS LASER DIODES [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (12): : 4735 - +

[9] THE GENERATION BY ELECTRON-IRRADIATION OF ARSENIC ANTI-SITE DEFECTS IN N-TYPE GAAS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (15): : 2653 - 2659

[10] Bourgoin J., 1983, POINT DEFECTS SEMICO

[1] LUMINESCENCE IN INTRINSIC AND ANNEALED ELECTRON-IRRADIATED GAAS - CD [J]. PHYSICAL REVIEW, 1969, 183 (03): : 777 - &

[2] RADIATIVE RECOMBINATION IN ANNEALED ELECTRON-IRRADIATED GAAS [J]. PHYSICAL REVIEW, 1966, 149 (02): : 679 - &

[3] ARNOLD GW, 1968, RAD EFFECTS SEMICOND, P435

[4] ANNEALING OF ELECTRON-IRRADIATED GAAS [J]. PHYSICAL REVIEW, 1962, 127 (05): : 1576 - &

[5] BACHELET GB, 1981, PHYS REV B, V24, P943

[6] THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J]. PHYSICAL REVIEW B, 1980, 21 (12): : 5662 - 5686

[7] BARAFF GA, 1984, COMMUNICATION

[8] EFFECTS OF CO-60 GAMMA IRRADIATION ON EPITAXIAL GAAS LASER DIODES [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (12): : 4735 - +

[9] THE GENERATION BY ELECTRON-IRRADIATION OF ARSENIC ANTI-SITE DEFECTS IN N-TYPE GAAS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (15): : 2653 - 2659

[10] Bourgoin J., 1983, POINT DEFECTS SEMICO