IRRADIATION-INDUCED DEFECTS IN GAAS

[71] PONS D, 1980, APPL PHYS LETT, V37, P423

[72] PONS D, 1981, I PHYS C SER, V59, P269

[73] THRESHOLD ENERGY FOR ATOMIC DISPLACEMENT IN ELECTRON-IRRADIATED GERMANIUM [J]. REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (01): : 15 - 19

[74] POULIN F, 1981, RECENT DEV CONDENSED, V3, P83

[75] PRESSURE-DEPENDENCE OF DEEP LEVELS IN GAAS [J]. PHYSICAL REVIEW B, 1982, 25 (12): : 7661 - 7665

[76] AN ELECTRON-TRAPPING DEFECT LEVEL ASSOCIATED WITH THE 235-K ANNEALING STAGE IN ELECTRON-IRRADIATED NORMAL-GAAS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (01): : 43 - 54

[77] HYDROGEN-ION BOMBARDMENT OF GAAS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (12) : 981 - 983

[78] ELECTRICAL STUDIES OF LOW-TEMPERATURE NEUTRON- AND ELECTRON-IRRADIATED EPITAXIAL NORMAL-TYPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (13) : 5300 - +

[79] DEFECTS INTRODUCED BY HIGH-TEMPERATURE ELECTRON-IRRADIATION IN NORMAL-GAAS [J]. PHYSICA B & C, 1983, 116 (1-3): : 394 - 397

[80] STIEVENARD D, 1985, UNPUB J APPL PHYS

[71] PONS D, 1980, APPL PHYS LETT, V37, P423

[72] PONS D, 1981, I PHYS C SER, V59, P269

[73] THRESHOLD ENERGY FOR ATOMIC DISPLACEMENT IN ELECTRON-IRRADIATED GERMANIUM [J]. REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (01): : 15 - 19

[74] POULIN F, 1981, RECENT DEV CONDENSED, V3, P83

[75] PRESSURE-DEPENDENCE OF DEEP LEVELS IN GAAS [J]. PHYSICAL REVIEW B, 1982, 25 (12): : 7661 - 7665

[76] AN ELECTRON-TRAPPING DEFECT LEVEL ASSOCIATED WITH THE 235-K ANNEALING STAGE IN ELECTRON-IRRADIATED NORMAL-GAAS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (01): : 43 - 54

[77] HYDROGEN-ION BOMBARDMENT OF GAAS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (12) : 981 - 983

[78] ELECTRICAL STUDIES OF LOW-TEMPERATURE NEUTRON- AND ELECTRON-IRRADIATED EPITAXIAL NORMAL-TYPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (13) : 5300 - +

[79] DEFECTS INTRODUCED BY HIGH-TEMPERATURE ELECTRON-IRRADIATION IN NORMAL-GAAS [J]. PHYSICA B & C, 1983, 116 (1-3): : 394 - 397

[80] STIEVENARD D, 1985, UNPUB J APPL PHYS