THRESHOLD ENERGY FOR ATOMIC DISPLACEMENT IN ELECTRON-IRRADIATED GERMANIUM

被引：26

作者：

POULIN, F

BOURGOIN, JC

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1980年 / 15卷 / 01期

关键词：

D O I：

10.1051/rphysap:0198000150101500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：15 / 19

页数：5

共 9 条

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[3] PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON
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[4] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
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[5] LOW-TEMPERATURE ANNEALING STUDIES IN GE
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[6] ENERGY LEVELS IN ELECTRON IRRADIATED N-TYPE GERMANIUM.
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[J]. 1979, 40 (02): : l19 - l22
[7] PONS D, 1979, THESIS U PARIS 6
[8] INVESTIGATIONS OF OXYGEN-DEFECT INTERACTIONS BETWEEN 25 AND 700 DEGREES K IN IRRADIATED GERMANIUM
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[9] [No title captured]