THRESHOLD ENERGY DETERMINATION IN THICK SEMICONDUCTOR SAMPLES

被引：12

作者：

BOURGOIN, JC ^{[1
]}

LUDEAU, P ^{[1
]}

MASSARANI, B ^{[1
]}

机构：

[1] UNIV PARIS 7,CNRS,ENS,GRP PHYS SOLIDES,TOUR 23,2 PL JUSSIEU,75221 PARIS,FRANCE

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1976年 / 11卷 / 02期

关键词：

D O I：

10.1051/rphysap:01976001102027900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：279 / 284

页数：6

共 28 条

[1]

BAUERLEIN R, 1962, RAD DAMAGE SOLIDS, P358

[2] ZUM ENERGIEVERLUST SCHNELLER ELEKTRONEN IN DUNNEN SCHICHTEN [J].

BLUNCK, O ;

LEISEGANG, S .

ZEITSCHRIFT FUR PHYSIK, 1950, 128 (04) :500-505

[3]

BOURGOIN JC, TO BE PUBLISHED

[4]

BOURGOIN JC, 1974, LATTICE DEFECTS SEMI, P149

[5] ENERGY, ORIENTATION, AND TEMPERATURE DEPENDENCE OF DEFECT FORMATION IN ELECTRON IRRADIATION OF N-TYPE GERMANIUM [J].

BROWN, WL ;

AUGUSTYNIAK, WM .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1300-1309

[6]

CORBETT JW, 1966, SOLID STATE PHYS S7, pCH2

[7] RADIATION DEFECT INTRODUCTION RATES IN N- AND PARA TYPE SILICON IN VICINITY OF RADIATION DAMAGE THRESHOLD [J].

FLICKER, H ;

LOFERSKI, JJ ;

SCOTTMON.J .

PHYSICAL REVIEW, 1962, 128 (06) :2557-&

[8]

GERASIMENKO NN, 1972, SOV PHYS SEMICOND+, V5, P1439

[9] C-V CHARACTERISTICS OF SCHOTTKY BARRIERS ON LABORATORY GROWN SEMICONDUCTING DIAMONDS [J].

GLOVER, GH .

SOLID-STATE ELECTRONICS, 1973, 16 (09) :973-+

[10] RANGE-ENERGY RELATIONS FOR ELECTRONS AND THE DETERMINATION OF BETA-RAY END-POINT ENERGIES BY ABSORPTION [J].

KATZ, L ;

PENFOLD, AS .

REVIEWS OF MODERN PHYSICS, 1952, 24 (01) :28-44

← 1 2 3 →