IRRADIATION-INDUCED DEFECTS IN GAAS

[31] ELECTRICAL PROPERTIES OF ELECTRON-IRRADIATED GAAS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (06) : 209 - 214

[32] KALMA AH, 1973, I PHYS C SER, V16, P364

[33] KENNEDY TA, 1981, B AM PHYS SOC, V26, P255

[34] KIMERLING LC, 1975, I PHYS C SER, V23, P589

[35] KOLCHENKO TI, 1975, SOV PHYS SEMICOND+, V9, P1153

[36] INTRODUCTION AND ANNEALING OF DEFECTS IN N-TYPE GAAS FOLLOWING IRRADIATION WITH ELECTRONS AND GAMMA-RAYS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 37 (1-2): : 67 - 72

[37] KRAVCHENKO AF, 1979, SOV PHYS SEMICOND, V12, P952

[38] DEEP TRAPS IN GAAS UNDER HYDROSTATIC-PRESSURE [J]. SOLID STATE COMMUNICATIONS, 1982, 41 (01) : 89 - 92

[39] Lang D. V., 1977, I PHYS C SER, V31, P70

[40] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[31] ELECTRICAL PROPERTIES OF ELECTRON-IRRADIATED GAAS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (06) : 209 - 214

[32] KALMA AH, 1973, I PHYS C SER, V16, P364

[33] KENNEDY TA, 1981, B AM PHYS SOC, V26, P255

[34] KIMERLING LC, 1975, I PHYS C SER, V23, P589

[35] KOLCHENKO TI, 1975, SOV PHYS SEMICOND+, V9, P1153

[36] INTRODUCTION AND ANNEALING OF DEFECTS IN N-TYPE GAAS FOLLOWING IRRADIATION WITH ELECTRONS AND GAMMA-RAYS [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 37 (1-2): : 67 - 72

[37] KRAVCHENKO AF, 1979, SOV PHYS SEMICOND, V12, P952

[38] DEEP TRAPS IN GAAS UNDER HYDROSTATIC-PRESSURE [J]. SOLID STATE COMMUNICATIONS, 1982, 41 (01) : 89 - 92

[39] Lang D. V., 1977, I PHYS C SER, V31, P70

[40] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032