THE GENERATION BY ELECTRON-IRRADIATION OF ARSENIC ANTI-SITE DEFECTS IN N-TYPE GAAS

被引：31

作者：

BEALL, RB

NEWMAN, RC

WHITEHOUSE, JE

WOODHEAD, J

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1984年 / 17卷 / 15期

关键词：

D O I：

10.1088/0022-3719/17/15/005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：2653 / 2659

页数：7

共 18 条

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[9] THE SELECTIVE TRAPPING OF MOBILE GROUP-V INTERSTITIALS BY IMPURITIES IN ELECTRON-IRRADIATED GAAS AND GAP
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