FORMATION OF ASGA ANTISITE DEFECTS IN ELECTRON-IRRADIATED GAAS

被引：37

作者：

VONBARDELEBEN, HJ

BOURGOIN, JC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 02期

关键词：

D O I：

10.1063/1.336284

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1041 / 1043

页数：3

共 12 条

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[5]

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[6] THE SELECTIVE TRAPPING OF MOBILE GROUP-V INTERSTITIALS BY IMPURITIES IN ELECTRON-IRRADIATED GAAS AND GAP [J].

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[7] ANISOTROPIC DEFECT INTRODUCTION IN NORMAL-GAAS AND PARA-GAAS BY ELECTRON-IRRADIATION [J].

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[8] ANISOTROPIC-DEFECT INTRODUCTION IN GAAS BY ELECTRON-IRRADIATION [J].

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[9]

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[10] SUBMILLIMETER ELECTRON-PARAMAGNETIC-RES EVIDENCE FOR THE ARSENIC ANTISITE DEFECT IN GAAS [J].

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