ANTISITE-RELATED DEFECTS IN PLASTICALLY DEFORMED GAAS

[1] CHANG T, 1978, NBS SPEC PUBL, V260, P59

[2] FARVACQUE JL, 1985, J ELECTRON MATER A, V14, P373

[3] GOLTZENE A, 1985, J ELECTRON MATER A, V14, P937

[4] OPTICALLY DETECTED ELECTRON-NUCLEAR DOUBLE-RESONANCE OF AS-ANTISITE DEFECTS IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (12) : 1187 - 1190

[5] STUDY OF DEFORMATION-PRODUCED DEEP LEVELS IN N-GAAS USING DEEP LEVEL TRANSIENT CAPACITANCE SPECTROSCOPY [J]. APPLIED PHYSICS, 1980, 21 (03): : 257 - 261

[6] LAGOWSKI J, 1985, J ELECTRON MATER A, V14, P73

[7] Makram-Ebeid S., 1984, Semi-Insulating III-V materials, P184

[8] OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 747 - 748

[9] PHOTOCONDUCTIVITY IN PLASTICALLY DEFORMED GAAS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1979, 47 (06) : 1912 - 1919

[10] NEWMAN RC, 1985, J ELECTRON MATER A, V14, P87

[1] CHANG T, 1978, NBS SPEC PUBL, V260, P59

[2] FARVACQUE JL, 1985, J ELECTRON MATER A, V14, P373

[3] GOLTZENE A, 1985, J ELECTRON MATER A, V14, P937

[4] OPTICALLY DETECTED ELECTRON-NUCLEAR DOUBLE-RESONANCE OF AS-ANTISITE DEFECTS IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (12) : 1187 - 1190

[5] STUDY OF DEFORMATION-PRODUCED DEEP LEVELS IN N-GAAS USING DEEP LEVEL TRANSIENT CAPACITANCE SPECTROSCOPY [J]. APPLIED PHYSICS, 1980, 21 (03): : 257 - 261

[6] LAGOWSKI J, 1985, J ELECTRON MATER A, V14, P73

[7] Makram-Ebeid S., 1984, Semi-Insulating III-V materials, P184

[8] OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 747 - 748

[9] PHOTOCONDUCTIVITY IN PLASTICALLY DEFORMED GAAS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1979, 47 (06) : 1912 - 1919

[10] NEWMAN RC, 1985, J ELECTRON MATER A, V14, P87